Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices

Kazuhiro Mochizuki; Hidekatsu Onose

doi:10.4028/www.scientific.net/MSF.600-603.607

Paper Titles

Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC
p.585

Dynamical Simulation of SiO₂/4H-SiC Interface on C-Face Oxidation Process: From First Principles
p.591

Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face
p.597

Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC
p.603

Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices
p.607

Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC
p.611

Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy
p.615

Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC
p.619

Structure and Lattice Location of Ge Implanted 4H-SiC
p.623

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Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices

Abstract:

We demonstrate a Dual-Pearson approach to model ion-implanted Al concentration profiles in 4H-SiC for high-precision design of high-voltage power devices. Based on the Monte Carlo simulated data for 35-400 keV implantation, we determine the nine Dual-Pearson parameters and confirm precise reproduction of profiles of 1015-1021 cm-3 Al with sufficient smoothness. This leads to a direct incorporation of implanted Al profiles into a device simulator. The influence of dose and energy on channeling is also discussed from the view point of implantation-induced disorder in 4H-SiC.