Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices
We demonstrate a Dual-Pearson approach to model ion-implanted Al concentration profiles in 4H-SiC for high-precision design of high-voltage power devices. Based on the Monte Carlo simulated data for 35-400 keV implantation, we determine the nine Dual-Pearson parameters and confirm precise reproduction of profiles of 1015-1021 cm-3 Al with sufficient smoothness. This leads to a direct incorporation of implanted Al profiles into a device simulator. The influence of dose and energy on channeling is also discussed from the view point of implantation-induced disorder in 4H-SiC.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
K. Mochizuki and H. Onose, "Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices", Materials Science Forum, Vols. 600-603, pp. 607-610, 2009