Structure and Lattice Location of Ge Implanted 4H-SiC

Thomas Kups; Katja Tonisch; M. Voelskow; Wolfgang Skorupa; Alexander Konkin; Joerg Pezoldt

doi:10.4028/www.scientific.net/MSF.600-603.623

Paper Titles

Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices
p.607

Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC
p.611

Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy
p.615

Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC
p.619

Structure and Lattice Location of Ge Implanted 4H-SiC
p.623

Laser Doping of Chromium and Selenium in p-Type 4H-SiC
p.627

Phase Formation and Growth Kinetics of an Interface Layer in Ni/SiC
p.631

Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide
p.635

Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC
p.639

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Structure and Lattice Location of Ge Implanted 4H-SiC

Abstract:

Pseudomorphic 4H-(Si1-xC1-y)Gex+y solid solutions were formed by ion implantation at 600°C and rapid thermal annealing at implanted Ge concentrations below 10%. At higher implantation doses followed by annealing 3C-SiC inclusion and SiGe precipitates are formed. Transmission electron microscopy investigations accompanied with “atomic location by channeling enhanced microanalysis” of the annealed samples revealed an increasing incorporation of Ge on Si lattice sites.