Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC

Duy Minh Nguyen; Christophe Raynaud; Mihai Lazar; Heu Vang; Dominique Planson

doi:10.4028/www.scientific.net/MSF.600-603.639

Paper Titles

Structure and Lattice Location of Ge Implanted 4H-SiC
p.623

Laser Doping of Chromium and Selenium in p-Type 4H-SiC
p.627

Phase Formation and Growth Kinetics of an Interface Layer in Ni/SiC
p.631

Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide
p.635

Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC
p.639

Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode
p.643

Investigation of Subcontact Layers in SiC after Diffusion Welding
p.647

Isotropic Etching of SiC
p.651

4H Silicon Carbide Etching Using Chlorine Trifluoride Gas
p.655

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Comparison of Electrical Properties of Ohmic...

Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC

Abstract:

N+ 4H-SiC commercial substrates with n-type epilayers have been used to realize bipolar diodes and TLM structures. The p-type emitter of diodes was realized by Al implantations followed by a post-implantation annealing with or without a graphite capping layer. Ohmic contacts were formed by depositing Ti/Ni on the backside and Ni/Al on the topside of the wafer. It appears that capping the sample during the annealing reduces considerably the surface roughness and the specific contact resistance. Sheet resistance and specific contact resistance as low as 2kΩ/□ and respectively 1.75×10-4 Ωcm² at 300 K have been obtained. I-V measurements as a function of temperature have been performed from ~100 to ~500 K. The variations of the series resistance vs. temperature can be explained by the freeze-out of carriers and by the variation of carrier mobility.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2007

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Pages:

639-642

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.639

Citation:

Cite this paper

Online since:

September 2008

Authors:

Duy Minh Nguyen, Christophe Raynaud, Mihai Lazar, Heu Vang, Dominique Planson

Keywords:

Graphite Cap, Ohmic Contact, Specific Resistance, Surface Roughness (SR), TLM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] E. Oliviero, M. Lazar, H. Vang, C. Dubois, P. Cremillieu, J.L. Leclercq, J. Dazord and D. Planson, Mater. Sci. Forum Vol. 556-557 (2007), p.611.

DOI: 10.4028/www.scientific.net/msf.556-557.611

Google Scholar

[2] H. Vang, M. Lazar, P. Brosselard, C. Raynaud, P. Cremillieu, J. -L. Leclercq, J. -M. Bluet, S. Scharnholz, D. Planson, Superlattices and Microstructures Vol. 40 (2006), p.626.

DOI: 10.1016/j.spmi.2006.08.004

Google Scholar

[3] J. Vilm and L. Wandinger, Electrochemical Society, New York (1969), p.31.

Google Scholar

[4] E.H. Rhoderick and R.R. Williams, Clarendon Press, Oxford (1988), p.117.

Google Scholar

[5] J.I. Noh, K.S. Nahm, K.C. Kim, M.A. Capano, Solid-State Electronics 46 (2002), p.2273.

Google Scholar

[6] B.H. Tsao, S. Liu, J. Scofield, Mater. Sci. Forum Vols. 457-460 (2004), p.841.

Google Scholar