Isotropic Etching of SiC

Thomas Stauden; Florentina Niebelschütz; Katja Tonisch; Volker Cimalla; Gernot Ecke; Christian  Haupt; Joerg Pezoldt

doi:10.4028/www.scientific.net/MSF.600-603.651

Paper Titles

Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide
p.635

Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC
p.639

Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode
p.643

Investigation of Subcontact Layers in SiC after Diffusion Welding
p.647

Isotropic Etching of SiC
p.651

4H Silicon Carbide Etching Using Chlorine Trifluoride Gas
p.655

Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen
p.659

Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime
p.663

Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry
p.667

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Isotropic Etching of SiC

Isotropic Etching of SiC

Abstract:

Isotropic etching of silicon carbide was achieved using a capacitive coupled parallel plate reactor in plasma etching mode and SF6 at elevated substrate temperatures. It was observed to be remarkable at substrate temperatures above 350°C. The influence of chamber pressure, masking materials, rf-power and substrate temperature were analyzed. Thereby, 8.5° off-axis oriented 4HSiC wafers exhibit a larger vertical and lateral etching rate compared to on-axis oriented SiC wafers. Additionally, the erosion of nitrogen containing masking material results in a reduction of the etching rates.