Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry

Takeshi Yamamoto; Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.600-603.667

Paper Titles

Isotropic Etching of SiC
p.651

4H Silicon Carbide Etching Using Chlorine Trifluoride Gas
p.655

Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen
p.659

Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime
p.663

Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry
p.667

TEM Observation of SiO₂/4H-SiC Hetero Interface
p.671

Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face
p.675

Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO₂ Stack Gate Structures
p.679

Anomalously High Channel Mobility in SiC-MOSFETs with Al₂O₃/SiO_x/SiC Gate Structure
p.683

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Oxygen-Partial-Pressure Dependence of SiC...

Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry

Abstract:

Real time observations of SiC (000–1) C-face and (0001) Si-face oxidation were performed using an in-situ ellipsometer over the oxygen-partial-pressure range from 0.1 to 1.0 atm. We analyzed the relations between oxide growth rate and oxide thickness by applying an empirical relation proposed by Massoud et al. We found the occurrence of oxidation enhancement in the thin oxide regime also for Si-face as well as for C-face. We have discussed the oxygen-partial-pressure dependence of the oxidation rate constants between SiC C- and Si face, comparing with that of Si.