Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry

Abstract:

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Real time observations of SiC (000–1) C-face and (0001) Si-face oxidation were performed using an in-situ ellipsometer over the oxygen-partial-pressure range from 0.1 to 1.0 atm. We analyzed the relations between oxide growth rate and oxide thickness by applying an empirical relation proposed by Massoud et al. We found the occurrence of oxidation enhancement in the thin oxide regime also for Si-face as well as for C-face. We have discussed the oxygen-partial-pressure dependence of the oxidation rate constants between SiC C- and Si face, comparing with that of Si.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

667-670

DOI:

10.4028/www.scientific.net/MSF.600-603.667

Citation:

T. Yamamoto et al., "Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry ", Materials Science Forum, Vols. 600-603, pp. 667-670, 2009

Online since:

September 2008

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$35.00

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