Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face

Abstract:

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4H-SiC MOSFET on carbon face exhibits the high channel mobility when the gate oxide is formed by pyrogenic wet oxidation. However, this improvement is not proof against the metallization annealing which is indispensable in the fabrication of the SiC power MOSFETs. We develop the alternative metallization process suitable for the high channel mobility on the carbon face. The metallization annealing in hydrogen ambient has much effect to suppress the degradation of the channel mobility. The lateral MOSFET with the ohmic contact formed by hydrogen annealing exhibits the high channel mobility which is comparable to the channel mobility of the lateral MOSFET formed without metallization annealing.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

675-678

DOI:

10.4028/www.scientific.net/MSF.600-603.675

Citation:

S. Harada et al., "Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face ", Materials Science Forum, Vols. 600-603, pp. 675-678, 2009

Online since:

September 2008

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Price:

$35.00

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