Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face

Shinsuke Harada; Makoto Kato; Tsutomu Yatsuo; Kenji Fukuda; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.600-603.675

Paper Titles

Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen
p.659

Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime
p.663

Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry
p.667

TEM Observation of SiO₂/4H-SiC Hetero Interface
p.671

Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face
p.675

Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO₂ Stack Gate Structures
p.679

Anomalously High Channel Mobility in SiC-MOSFETs with Al₂O₃/SiO_x/SiC Gate Structure
p.683

Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique
p.687

High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing
p.691

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Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face

Abstract:

4H-SiC MOSFET on carbon face exhibits the high channel mobility when the gate oxide is formed by pyrogenic wet oxidation. However, this improvement is not proof against the metallization annealing which is indispensable in the fabrication of the SiC power MOSFETs. We develop the alternative metallization process suitable for the high channel mobility on the carbon face. The metallization annealing in hydrogen ambient has much effect to suppress the degradation of the channel mobility. The lateral MOSFET with the ohmic contact formed by hydrogen annealing exhibits the high channel mobility which is comparable to the channel mobility of the lateral MOSFET formed without metallization annealing.