Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure

Shiro Hino; Tomohiro Hatayama; Jun Kato; Naruhisa Miura; Tatsuo Oomori; Eisuke Tokumitsu

doi:10.4028/www.scientific.net/MSF.600-603.683

Paper Titles

Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry
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TEM Observation of SiO₂/4H-SiC Hetero Interface
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Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face
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Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO₂ Stack Gate Structures
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Anomalously High Channel Mobility in SiC-MOSFETs with Al₂O₃/SiO_x/SiC Gate Structure
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Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique
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High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing
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High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface
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Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation
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Anomalously High Channel Mobility in SiC-MOSFETs with Al₂O₃/SiO_x/SiC Gate Structure

Abstract:

4H-SiC MOSFETs with Al2O3/SiC and Al2O3/SiOx/SiC gate structures have been fabricated and characterized. Al2O3 was deposited by metal-organic chemical vapor deposition (MOCVD) and the SiOx layer was formed by dry-O2 oxidation. Insertion of 1.2 nm-thickness-SiOx layer drastically improves the channel mobility of Al2O3/SiC-MOSFET and anomalously high field effect mobility (μFE) of 284 cm2/Vs was obtained. The μFE of Al2O3/SiOx/SiC-MOSFET with various SiOx thickness was investigated, and it was found that insertion of a thin SiOx layer (< 2 nm) followed by the low temperature deposition of Al2O3 results in Al2O3/SiOx/SiC-MOSFET with such a high channel mobility.