High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing

Takeshi Endo; Eiichi Okuno; Toshio Sakakibara; Shoichi Onda

doi:10.4028/www.scientific.net/MSF.600-603.691

Paper Titles

Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face
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Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO₂ Stack Gate Structures
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Anomalously High Channel Mobility in SiC-MOSFETs with Al₂O₃/SiO_x/SiC Gate Structure
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Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique
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High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing
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High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface
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Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation
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Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays
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Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays
p.707

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High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing

Abstract:

We studied the annealing process to improve the field-effect channel mobility (μFE) on the 4H-SiC (11-20) face. We found that wet annealing, in which a wet atmosphere was maintained during the cooling-down period to 600°C after wet oxidation, was effective. The interface states (Dit) near the conduction band edge decreased and the μFE increased up to 244 cm2/Vs. Furthermore, the origin of this high channel mobility was investigated using secondary ion mass spectroscopy (SIMS) measurement and thermal desorption spectroscopy (TDS) analysis. It was indicated that the hydrogen density at the MOS interface was increased by the wet annealing and the hydrogen was desorbed mainly at temperatures between 800 °C and 900 °C. These hydrogen desorption temperatures also corresponded to the temperatures of the μFE reduction by argon annealing after the wet annealing. These results indicated that this high channel mobility was achieved by hydrogen passivation during the wet annealing at temperatures between 800 °C and 900 °C.