Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays

Abstract:

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N-channel MOSFETs are irradiated with gamma-rays (g-rays) up to 3.16 MGy(SiO2) at room temperature. Above 1 MGy, the effective channel mobility increases with increasing absorbed dose. A similar increase is observed for the Hall mobility in the inversion layer. In addition, the Hall-effect measurements indicate a reduction of the interface trap density.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

703-706

DOI:

10.4028/www.scientific.net/MSF.600-603.703

Citation:

S. Hishiki et al., "Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays", Materials Science Forum, Vols. 600-603, pp. 703-706, 2009

Online since:

September 2008

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Price:

$35.00

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