Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays

Shigeomi Hishiki; Sergey A. Reshanov; Takeshi Ohshima; Hisayoshi Itoh; Gerhard Pensl

doi:10.4028/www.scientific.net/MSF.600-603.703

Paper Titles

Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique
p.687

High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing
p.691

High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface
p.695

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation
p.699

Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays
p.703

Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays
p.707

4H-SiC p-Channel MOSFETs with Epi-Channel Structure
p.711

Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs
p.715

Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs
p.719

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Reduction of Interface Traps and Enhancement of...

Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays

Abstract:

N-channel MOSFETs are irradiated with gamma-rays (g-rays) up to 3.16 MGy(SiO2) at room temperature. Above 1 MGy, the effective channel mobility increases with increasing absorbed dose. A similar increase is observed for the Hall mobility in the inversion layer. In addition, the Hall-effect measurements indicate a reduction of the interface trap density.