Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs

Abstract:

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We have identified the crystal planes of 4H-SiC, interfacing with gate oxide, which will lead to minimum defect density and lowest interface corrugations. The atomic surface density, surface energy, and surface roughness of various crystal planes of 4H-SiC have been computationally characterized using Molecular Dynamics simulations. We have also investigated the screening distances of defects in SiO2 and SiC using a multiscale approach.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

715-718

DOI:

10.4028/www.scientific.net/MSF.600-603.715

Citation:

A. Chatterjee et al., "Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs", Materials Science Forum, Vols. 600-603, pp. 715-718, 2009

Online since:

September 2008

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Price:

$35.00

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