Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs
We have identified the crystal planes of 4H-SiC, interfacing with gate oxide, which will lead to minimum defect density and lowest interface corrugations. The atomic surface density, surface energy, and surface roughness of various crystal planes of 4H-SiC have been computationally characterized using Molecular Dynamics simulations. We have also investigated the screening distances of defects in SiO2 and SiC using a multiscale approach.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
A. Chatterjee et al., "Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs", Materials Science Forum, Vols. 600-603, pp. 715-718, 2009