Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs

Aveek Chatterjee; Asha  Bhat; Kevin Matocha

doi:10.4028/www.scientific.net/MSF.600-603.715

Paper Titles

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation
p.699

Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays
p.703

Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays
p.707

4H-SiC p-Channel MOSFETs with Epi-Channel Structure
p.711

Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs
p.715

Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs
p.719

The Inefficiency of H₂-Passivation as a Criterion for the Origin of SiC/SiO₂ Deep Interface States - a Theoretical Study
p.723

Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy
p.727

Effect of Post-Oxidation Annealing on High-Temperature Grown SiO₂/4H-SiC Interface
p.731

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Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs

Abstract:

We have identified the crystal planes of 4H-SiC, interfacing with gate oxide, which will lead to minimum defect density and lowest interface corrugations. The atomic surface density, surface energy, and surface roughness of various crystal planes of 4H-SiC have been computationally characterized using Molecular Dynamics simulations. We have also investigated the screening distances of defects in SiO2 and SiC using a multiscale approach.