The Inefficiency of H2-Passivation as a Criterion for the Origin of SiC/SiO2 Deep Interface States - a Theoretical Study

Abstract:

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Recently, Wang et. al. formulated a criterion for identifying the source of deep interface sates at the SiC/SiO2 interface, based on the known inefficiency of H2 passivation. We apply this criterion to a variety of excess carbon defects at the interface, which we have predicted to be energetically feasible. We find that, also with respect to this criterion, the simple C split interstitials are the most likely cause of the deep interface states among the examined defects.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

723-726

DOI:

10.4028/www.scientific.net/MSF.600-603.723

Citation:

J. M. Knaup et al., "The Inefficiency of H2-Passivation as a Criterion for the Origin of SiC/SiO2 Deep Interface States - a Theoretical Study ", Materials Science Forum, Vols. 600-603, pp. 723-726, 2009

Online since:

September 2008

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$35.00

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