The Inefficiency of H2-Passivation as a Criterion for the Origin of SiC/SiO2 Deep Interface States - a Theoretical Study

Jan M. Knaup; Peter Deák; Thomas Frauenheim

doi:10.4028/www.scientific.net/MSF.600-603.723

Paper Titles

Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays
p.707

4H-SiC p-Channel MOSFETs with Epi-Channel Structure
p.711

Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs
p.715

Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs
p.719

The Inefficiency of H₂-Passivation as a Criterion for the Origin of SiC/SiO₂ Deep Interface States - a Theoretical Study
p.723

Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy
p.727

Effect of Post-Oxidation Annealing on High-Temperature Grown SiO₂/4H-SiC Interface
p.731

Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor
p.735

High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C
p.739

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The Inefficiency of H₂-Passivation as a Criterion for the Origin of SiC/SiO₂ Deep Interface States - a Theoretical Study

Abstract:

Recently, Wang et. al. formulated a criterion for identifying the source of deep interface sates at the SiC/SiO2 interface, based on the known inefficiency of H2 passivation. We apply this criterion to a variety of excess carbon defects at the interface, which we have predicted to be energetically feasible. We find that, also with respect to this criterion, the simple C split interstitials are the most likely cause of the deep interface states among the examined defects.