Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor

Shinji Nakagomi; Kenta  Sato; Shun  Suzuki; Yoshihiro Kokubun

doi:10.4028/www.scientific.net/MSF.600-603.735

Paper Titles

Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs
p.719

The Inefficiency of H₂-Passivation as a Criterion for the Origin of SiC/SiO₂ Deep Interface States - a Theoretical Study
p.723

Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy
p.727

Effect of Post-Oxidation Annealing on High-Temperature Grown SiO₂/4H-SiC Interface
p.731

Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor
p.735

High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C
p.739

The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping
p.743

Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs
p.747

Optimization of 4H-SiC MOS Properties with Cesium Implantation
p.751

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Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor

Abstract:

A metal-oxide-semiconductor (MOS) capacitor was fabricated using 4H-SiC epitaxial layer, and the interface state was evaluated in oxygen and hydrogen ambient under high-temperature conditions by the AC conductance technique. The relationships between interface state density (Dit), and corresponding time constant (tit) were obtained. Influences of oxide thickness and of gate metal (Pt or Al) were studied. Dit of Pt gate capacitor is influenced by ambient gas at higher temperature but Dit of Al gate capacitor is little affected by ambient gas. Dit of capacitor with thicker oxide layer tends to be lower than that of capacitor with thinner oxide layer. Interface states with larger time constant are decreased for hydrogen ambient comparing with oxygen ambient in the Pt gate capacitor.