Optimization of 4H-SiC MOS Properties with Cesium Implantation

Abstract:

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The effect of incorporation of cesium with implantation on the electrical characteristics of SiO2/4H-SiC interface has been evaluated using MOS capacitors. With a cesium dosage of 1012 and 3x1012 cm-2 on deposited oxide re-oxidized in steam, effective oxide charge densities of - 1.4x1012 and -7.5x1011 cm-2 respectively were extracted and a cesium implant activation percentage of 33% was estimated from flatband voltage shift. Also, corresponding interfacial state densities of 2.5x1013 and 1.8x1013 cm-2-eV-1 near the conduction band edge were extracted from High-Low frequency C-V technique, showing a decreasing Dit with increasing Cs dosage.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

751-754

DOI:

10.4028/www.scientific.net/MSF.600-603.751

Citation:

Y. Wang et al., "Optimization of 4H-SiC MOS Properties with Cesium Implantation", Materials Science Forum, Vols. 600-603, pp. 751-754, 2009

Online since:

September 2008

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Price:

$35.00

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