Optimization of 4H-SiC MOS Properties with Cesium Implantation

Y. Wang; T. Khan; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.600-603.751

Paper Titles

Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor
p.735

High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C
p.739

The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping
p.743

Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs
p.747

Optimization of 4H-SiC MOS Properties with Cesium Implantation
p.751

A Study of Deep Energy-Level Traps at the 4H-SiC/SiO₂Interface and Their Passivation by Hydrogen
p.755

Interface and Carrier Transport Behaviour in Al/HfO₂/SiO₂/SiC Structure
p.759

Improved Properties of AlON/4H SiC Interface for Passivation Studies
p.763

Influence of Annealing on the Al₂O₃/4H-SiC Interface
p.767

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Optimization of 4H-SiC MOS Properties with Cesium Implantation

Abstract:

The effect of incorporation of cesium with implantation on the electrical characteristics of SiO2/4H-SiC interface has been evaluated using MOS capacitors. With a cesium dosage of 1012 and 3x1012 cm-2 on deposited oxide re-oxidized in steam, effective oxide charge densities of - 1.4x1012 and -7.5x1011 cm-2 respectively were extracted and a cesium implant activation percentage of 33% was estimated from flatband voltage shift. Also, corresponding interfacial state densities of 2.5x1013 and 1.8x1013 cm-2-eV-1 near the conduction band edge were extracted from High-Low frequency C-V technique, showing a decreasing Dit with increasing Cs dosage.