Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs
This paper describes the influence of the geometric component in the charge-pumping measurement of 4H-SiC MOSFETs. Charge-pumping measurements were conducted on 4H-SiC MOSFETs with and without NO annealing. Charge-pumping measurements with different pulse-fall times revealed that the geometric component exists in 4H-SiC MOSFETs and is especially large in the unannealed MOSFETs. A sufficiently long fall-time is needed to minimize its effect, which is expected to be 1–10 μs for 4H-SiC MOSFETs with a gate length of 10 μm.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
D. Okamoto et al., "Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs", Materials Science Forum, Vols. 600-603, pp. 747-750, 2009