Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs

Dai Okamoto; Hiroshi Yano; Tomoaki Hatayama; Yukiharu Uraoka; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.600-603.747

Paper Titles

Effect of Post-Oxidation Annealing on High-Temperature Grown SiO₂/4H-SiC Interface
p.731

Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor
p.735

High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C
p.739

The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping
p.743

Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs
p.747

Optimization of 4H-SiC MOS Properties with Cesium Implantation
p.751

A Study of Deep Energy-Level Traps at the 4H-SiC/SiO₂Interface and Their Passivation by Hydrogen
p.755

Interface and Carrier Transport Behaviour in Al/HfO₂/SiO₂/SiC Structure
p.759

Improved Properties of AlON/4H SiC Interface for Passivation Studies
p.763

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Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs

Abstract:

This paper describes the influence of the geometric component in the charge-pumping measurement of 4H-SiC MOSFETs. Charge-pumping measurements were conducted on 4H-SiC MOSFETs with and without NO annealing. Charge-pumping measurements with different pulse-fall times revealed that the geometric component exists in 4H-SiC MOSFETs and is especially large in the unannealed MOSFETs. A sufficiently long fall-time is needed to minimize its effect, which is expected to be 1–10 μs for 4H-SiC MOSFETs with a gate length of 10 μm.