Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface
We have investigated the electrical and physical properties of high-temperature (1300, 1400 oC) grown dry oxide with or without post oxidation annealing (POA) in nitric oxide (NO) gas. A significant reduction in interface-trap density (Dit) has been observed in 1300 oC-grown dry oxide with or without NO POA if compared with the Dit of 1400 oC-grown dry oxide. The reason for this has been explained in this paper.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
J. H. Moon et al., "Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface", Materials Science Forum, Vols. 600-603, pp. 731-734, 2009