Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface

Abstract:

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We have investigated the electrical and physical properties of high-temperature (1300, 1400 oC) grown dry oxide with or without post oxidation annealing (POA) in nitric oxide (NO) gas. A significant reduction in interface-trap density (Dit) has been observed in 1300 oC-grown dry oxide with or without NO POA if compared with the Dit of 1400 oC-grown dry oxide. The reason for this has been explained in this paper.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

731-734

DOI:

10.4028/www.scientific.net/MSF.600-603.731

Citation:

J. H. Moon et al., "Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface", Materials Science Forum, Vols. 600-603, pp. 731-734, 2009

Online since:

September 2008

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$35.00

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