Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs
p.715
p.715
Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs
p.719
p.719
The Inefficiency of H2-Passivation as a Criterion for the Origin of SiC/SiO2 Deep Interface States - a Theoretical Study
p.723
p.723
Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy
p.727
p.727
Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface
p.731
p.731
Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor
p.735
p.735
High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C
p.739
p.739
The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping
p.743
p.743
Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs
p.747
p.747
Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface
Abstract:
We have investigated the electrical and physical properties of high-temperature (1300, 1400 oC) grown dry oxide with or without post oxidation annealing (POA) in nitric oxide (NO) gas. A significant reduction in interface-trap density (Dit) has been observed in 1300 oC-grown dry oxide with or without NO POA if compared with the Dit of 1400 oC-grown dry oxide. The reason for this has been explained in this paper.
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Periodical:
Materials Science Forum (Volumes 600-603)
Pages:
731-734
Citation:
Online since:
September 2008
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© 2009 Trans Tech Publications Ltd. All Rights Reserved
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