Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy
3C-SiC/SiO2-capacitors are fabricated by over-oxidation of an implanted Gaussian nitrogen (N) profile and investigated by conductance spectroscopy. A double peak structure is observed in the conductance spectra indicating two types of traps, which change their charge state at identical time constant, however, which are located at different energy positions in the bandgap of 3C-SiC. The experimental G/w-V and C-V characteristics are simulated and the existence of two types of traps is verified in the framework of a theoretical model.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
S. Beljakowa et al., "Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy ", Materials Science Forum, Vols. 600-603, pp. 727-730, 2009