Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy

Svetlana Beljakowa; M. Krieger; Thomas Frank; Gerhard Pensl; Lia Trapaidze; Naoki Hatta; Masayuki Abe; Hiroyuki Nagasawa; Adolf Schöner

doi:10.4028/www.scientific.net/MSF.600-603.727

Paper Titles

4H-SiC p-Channel MOSFETs with Epi-Channel Structure
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Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs
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Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs
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The Inefficiency of H₂-Passivation as a Criterion for the Origin of SiC/SiO₂ Deep Interface States - a Theoretical Study
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Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy
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Effect of Post-Oxidation Annealing on High-Temperature Grown SiO₂/4H-SiC Interface
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Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor
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High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C
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The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping
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Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy

Abstract:

3C-SiC/SiO2-capacitors are fabricated by over-oxidation of an implanted Gaussian nitrogen (N) profile and investigated by conductance spectroscopy. A double peak structure is observed in the conductance spectra indicating two types of traps, which change their charge state at identical time constant, however, which are located at different energy positions in the bandgap of 3C-SiC. The experimental G/w-V and C-V characteristics are simulated and the existence of two types of traps is verified in the framework of a theoretical model.