High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C

Ruby N. Ghosh; Reza Loloee; Tamara Isaacs-Smith; John R. Williams

doi:10.4028/www.scientific.net/MSF.600-603.739

Paper Titles

The Inefficiency of H₂-Passivation as a Criterion for the Origin of SiC/SiO₂ Deep Interface States - a Theoretical Study
p.723

Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy
p.727

Effect of Post-Oxidation Annealing on High-Temperature Grown SiO₂/4H-SiC Interface
p.731

Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor
p.735

High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C
p.739

The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping
p.743

Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs
p.747

Optimization of 4H-SiC MOS Properties with Cesium Implantation
p.751

A Study of Deep Energy-Level Traps at the 4H-SiC/SiO₂Interface and Their Passivation by Hydrogen
p.755

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High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C

Abstract:

The operation of metal-oxide-semiconductor (MOS) devices based on the semiconductor SiC in high temperature environments above 300 °C requires an understanding of the physical processes in these capacitor structures under operating conditions. In this study we have focused on the regime of inversion biasing, where the electrical characteristics of the device are dominated by minority carriers. We report on the direct observation of the high frequency inversion capacitance due to thermal generation of holes in 6H-SiC n-MOS capacitors between 450 and 600 °C by monitoring the 1MHz C-V characteristics of large area, 1000 μm diameter, capacitors in the dark. Our experimental results are consistent with a first order calculation based on the delta depletion approximation.