A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2 Interface and Their Passivation by Hydrogen

Fredrik Allerstam; E.Ö. Sveinbjörnsson

doi:10.4028/www.scientific.net/MSF.600-603.755

Paper Titles

High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C
p.739

The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping
p.743

Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs
p.747

Optimization of 4H-SiC MOS Properties with Cesium Implantation
p.751

A Study of Deep Energy-Level Traps at the 4H-SiC/SiO₂Interface and Their Passivation by Hydrogen
p.755

Interface and Carrier Transport Behaviour in Al/HfO₂/SiO₂/SiC Structure
p.759

Improved Properties of AlON/4H SiC Interface for Passivation Studies
p.763

Influence of Annealing on the Al₂O₃/4H-SiC Interface
p.767

Post Metallization Annealing Characterization of Interface Properties of High-κ Dielectrics Stack on Silicon Carbide
p.771

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603A Study of Deep Energy-Level Traps at the...

A Study of Deep Energy-Level Traps at the 4H-SiC/SiO₂Interface and Their Passivation by Hydrogen

Abstract:

This study is focused on characterization of deep energy-level interface traps formed during sodium enhanced oxidation of n-type Si face 4H-SiC. The traps are located 0.9 eV below the SiC conduction band edge as revealed by deep level transient spectroscopy. Furthermore these traps are passivated using post-metallization anneal at 400°C in forming gas ambient.