Influence of Annealing on the Al2O3/4H-SiC Interface

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Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

767-770

DOI:

10.4028/www.scientific.net/MSF.600-603.767

Citation:

U. Grossner et al., "Influence of Annealing on the Al2O3/4H-SiC Interface", Materials Science Forum, Vols. 600-603, pp. 767-770, 2009

Online since:

September 2008

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$38.00

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