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HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Influence of Annealing on the Al2O3/4H-SiC...

Influence of Annealing on the Al₂O₃/4H-SiC Interface

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Silicon Carbide and Related Materials 2007

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Periodical:

Materials Science Forum (Volumes 600-603)

Pages:

767-770

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.767

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Online since:

September 2008

Authors:

Ulrike Grossner, Marc Avice, Spyros Diplas, Annett Thøgersen, Jens S. Christensen, Bengt Gunnar Svensson, Ola Nilsen, Helmer Fjellvåg, John F. Watts

Keywords:

4H-SiC, ALCVD, Aluminium Oxide, Annealing, Interface, SIMS, TEM, XPS

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© 2009 Trans Tech Publications Ltd. All Rights Reserved

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