Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers

Stanislav I. Soloviev; Kevin Matocha; Greg Dunne; Zachary Stum

doi:10.4028/www.scientific.net/MSF.600-603.775

Paper Titles

Interface and Carrier Transport Behaviour in Al/HfO₂/SiO₂/SiC Structure
p.759

Improved Properties of AlON/4H SiC Interface for Passivation Studies
p.763

Influence of Annealing on the Al₂O₃/4H-SiC Interface
p.767

Post Metallization Annealing Characterization of Interface Properties of High-κ Dielectrics Stack on Silicon Carbide
p.771

Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
p.775

Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration
p.779

Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC
p.783

Gate-Area Dependence of SiC Thermal Oxides Reliability
p.787

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)
p.791

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Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers

Abstract:

In this work, the correlation between thermal oxide breakdown and dislocations in n-type 4H-SiC epitaxial wafers has been investigated. Thermal oxide was grown by oxidation in N2O at 1250°C followed by annealing in NO atmosphere. The electron beam induced current (EBIC) technique was employed to find correlations between the electrically active defects in epitaxial layers and regions where the oxide breakdowns occurred. The test measurements of leakage currents in MOS devices were performed in order to correlate the leakage currents with number of defects in the epi-layer detected by EBIC technique.