Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration

Abstract:

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Reliability of thermal oxides grown on the n-type 4H-SiC substrates implanted by nitrogen ion with low doping levels equal to or less than 1x1018 cm-3 has been investigated. The surface morphology becomes rough by the nitrogen implantation and the post implantation annealing. The field-to-breakdown value decreases with increase in the nitrogen concentration. The average EBD values are 11.6 MV/cm, 11.3 MV/cm and 10.7 MV/cm for the samples without the implantation and with the nitrogen implantation of doping levels of 1x1017 cm-3 and 1x1018 cm-3, respectively. The time-to-breakdown values were also degraded with the increase of the nitrogen implantation doping level. The reliability degradation of thermal oxides is caused by the implantation-induced breakdown factor.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

779-782

DOI:

10.4028/www.scientific.net/MSF.600-603.779

Citation:

J. Senzaki et al., "Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration", Materials Science Forum, Vols. 600-603, pp. 779-782, 2009

Online since:

September 2008

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$38.00

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