Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration

Junji Senzaki; Atsushi Shimozato; Kenji Fukuda; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.600-603.779

Paper Titles

Improved Properties of AlON/4H SiC Interface for Passivation Studies
p.763

Influence of Annealing on the Al₂O₃/4H-SiC Interface
p.767

Post Metallization Annealing Characterization of Interface Properties of High-κ Dielectrics Stack on Silicon Carbide
p.771

Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
p.775

Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration
p.779

Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC
p.783

Gate-Area Dependence of SiC Thermal Oxides Reliability
p.787

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)
p.791

Negative Field Reliability of ONO Gate Dielectric on 4H-SiC
p.795

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Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration

Abstract:

Reliability of thermal oxides grown on the n-type 4H-SiC substrates implanted by nitrogen ion with low doping levels equal to or less than 1x1018 cm-3 has been investigated. The surface morphology becomes rough by the nitrogen implantation and the post implantation annealing. The field-to-breakdown value decreases with increase in the nitrogen concentration. The average EBD values are 11.6 MV/cm, 11.3 MV/cm and 10.7 MV/cm for the samples without the implantation and with the nitrogen implantation of doping levels of 1x1017 cm-3 and 1x1018 cm-3, respectively. The time-to-breakdown values were also degraded with the increase of the nitrogen implantation doping level. The reliability degradation of thermal oxides is caused by the implantation-induced breakdown factor.