Gate-Area Dependence of SiC Thermal Oxides Reliability

Junji Senzaki; Atsushi Shimozato; Mitsuo Okamoto; Kazutoshi Kojima; Kenji Fukuda; Hajime Okumura; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.600-603.787

Paper Titles

Post Metallization Annealing Characterization of Interface Properties of High-κ Dielectrics Stack on Silicon Carbide
p.771

Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
p.775

Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration
p.779

Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC
p.783

Gate-Area Dependence of SiC Thermal Oxides Reliability
p.787

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)
p.791

Negative Field Reliability of ONO Gate Dielectric on 4H-SiC
p.795

TDDB Measurement of Gate SiO₂ on 4H-SiC Formed by Chemical Vapor Deposition
p.799

Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides
p.803

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Gate-Area Dependence of SiC Thermal Oxides Reliability

Abstract:

Reliability of thermal oxides grown on n-type 4H-SiC substrates using an area-scaling rule has been investigated, and an influence of dislocation defects on the TDDB characteristics was examined. Using the area-scaling rule, tBD distributions of thermal oxides with different gate-area were converged to one distribution under the same breakdown factor. Finally, the reliability prediction method of thermal oxides on 4H-SiC eliminating the effect of dislocation defects has been established.