Gate-Area Dependence of SiC Thermal Oxides Reliability
Reliability of thermal oxides grown on n-type 4H-SiC substrates using an area-scaling rule has been investigated, and an influence of dislocation defects on the TDDB characteristics was examined. Using the area-scaling rule, tBD distributions of thermal oxides with different gate-area were converged to one distribution under the same breakdown factor. Finally, the reliability prediction method of thermal oxides on 4H-SiC eliminating the effect of dislocation defects has been established.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
J. Senzaki et al., "Gate-Area Dependence of SiC Thermal Oxides Reliability", Materials Science Forum, Vols. 600-603, pp. 787-790, 2009