Gate-Area Dependence of SiC Thermal Oxides Reliability

Abstract:

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Reliability of thermal oxides grown on n-type 4H-SiC substrates using an area-scaling rule has been investigated, and an influence of dislocation defects on the TDDB characteristics was examined. Using the area-scaling rule, tBD distributions of thermal oxides with different gate-area were converged to one distribution under the same breakdown factor. Finally, the reliability prediction method of thermal oxides on 4H-SiC eliminating the effect of dislocation defects has been established.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

787-790

DOI:

10.4028/www.scientific.net/MSF.600-603.787

Citation:

J. Senzaki et al., "Gate-Area Dependence of SiC Thermal Oxides Reliability", Materials Science Forum, Vols. 600-603, pp. 787-790, 2009

Online since:

September 2008

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Price:

$35.00

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