Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides

John  Rozen; Sarit Dhar; San Wu  Wang; Valeri V. Afanas'ev; Sokrates T. Pantelides; John R. Williams; Leonard C. Feldman

doi:10.4028/www.scientific.net/MSF.600-603.803

Paper Titles

Gate-Area Dependence of SiC Thermal Oxides Reliability
p.787

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)
p.791

Negative Field Reliability of ONO Gate Dielectric on 4H-SiC
p.795

TDDB Measurement of Gate SiO₂ on 4H-SiC Formed by Chemical Vapor Deposition
p.799

Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides
p.803

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability
p.807

Characteristics of Sol-Gel Derived SiO₂Thick Film on 4H-SiC
p.811

New Chemical Planarization of SiC and GaN Using an Fe Plate in H₂O₂ Solution
p.815

Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
p.819

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Impact of Nitridation on Negative and Positive...

Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides

Abstract:

We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.