Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides

Abstract:

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We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

803-806

DOI:

10.4028/www.scientific.net/MSF.600-603.803

Citation:

J. Rozen et al., "Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides", Materials Science Forum, Vols. 600-603, pp. 803-806, 2009

Online since:

September 2008

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Price:

$35.00

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