Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability

Abstract:

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We have observed variations in the instability in the threshold voltage, VT, of SiC metaloxide semiconductor field-effect transistors (MOSFETs) from various sources and/or processes due to gate-bias stressing as a function of temperature. In some cases we see a dramatic increase in the instability with increasing temperature, consistent with interfacial charge trapping or de-trapping. In other cases the temperature response is very slight, and in still other cases we actually see VT instabilities that move in the opposite direction with bias, indicating the presence of mobile ions.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

807-810

DOI:

10.4028/www.scientific.net/MSF.600-603.807

Citation:

A. J. Lelis et al., "Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability ", Materials Science Forum, Vols. 600-603, pp. 807-810, 2009

Online since:

September 2008

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Price:

$35.00

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