TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition

Keiko Fujihira; Shohei Yoshida; Naruhisa Miura; Yukiyasu Nakao; Masayuki Imaizumi; Tetsuya Takami; Tatsuo Oomori

doi:10.4028/www.scientific.net/MSF.600-603.799

Paper Titles

Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC
p.783

Gate-Area Dependence of SiC Thermal Oxides Reliability
p.787

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)
p.791

Negative Field Reliability of ONO Gate Dielectric on 4H-SiC
p.795

TDDB Measurement of Gate SiO₂ on 4H-SiC Formed by Chemical Vapor Deposition
p.799

Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides
p.803

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability
p.807

Characteristics of Sol-Gel Derived SiO₂Thick Film on 4H-SiC
p.811

New Chemical Planarization of SiC and GaN Using an Fe Plate in H₂O₂ Solution
p.815

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603TDDB Measurement of Gate SiO2 on 4H-SiC Formed by...

TDDB Measurement of Gate SiO₂ on 4H-SiC Formed by Chemical Vapor Deposition

Abstract:

The reliability of CVD gate oxide was investigated by CCS-TDDB measurement and compared with thermally grown gate oxide. Although the QBD of thermal oxide becomes smaller for the larger oxide area, the QBD of CVD oxide is almost independent of the investigated gate oxide area. The QBD at F = 50% of CVD oxide, 3 C/cm2, is two orders of magnitude larger for the area of 1.96×10-3 cm2 at 1 mA/cm2 compared to that of thermal oxide. More than 80% of the CVD oxide breakdown occurs at the field oxide edge and more than 70% of the thermal oxide breakdown in the inner gate area. These results suggest that the lifetime of CVD oxide is hardly influenced by the quality of SiC, while the defects and/or impurities in SiC affect the lifetime of thermally grown oxide.