Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC

Tetsuo Hatakeyama; Takuma Suzuki; Junji Senzaki; Kenji Fukuda; Hirofumi  Matsuhata; Takashi Shinohe; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.600-603.783

Paper Titles

Influence of Annealing on the Al₂O₃/4H-SiC Interface
p.767

Post Metallization Annealing Characterization of Interface Properties of High-κ Dielectrics Stack on Silicon Carbide
p.771

Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
p.775

Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration
p.779

Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC
p.783

Gate-Area Dependence of SiC Thermal Oxides Reliability
p.787

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)
p.791

Negative Field Reliability of ONO Gate Dielectric on 4H-SiC
p.795

TDDB Measurement of Gate SiO₂ on 4H-SiC Formed by Chemical Vapor Deposition
p.799

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Impact of the Wafer Quality on the Reliability of...

Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC

Abstract:

We report on the reliability of the gate oxide on C-face of 4H-SiC. Constant current stress TDDB measurement shows that QBD of the gate oxide of f200 [μm] on C-face is as much as 18 [C/ cm2], which is much larger than the typical value (0.1[C/ cm2]) of that on Si-face of 4H-SiC. The lifetimes of the gate oxide under the electric field of 3[MV/cm] are roughly evaluated from the leakage characteristics and obtained QBD. The estimated lifetimes of the gate oxide of f600 [μm] are about 900 years. TDDB measurements of MOSs on two wafers, which have different dislocation densities, show that reliability of gate oxide on C-face is insensitive to the dislocation density. Meanwhile, reliability of the gate oxide is sensitive to the surface defect density: it is significantly degraded on the wafer, which has 2000 surface defects in a whole 2-inch wafer.