Negative Field Reliability of ONO Gate Dielectric on 4H-SiC

Abstract:

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It was experimentally shown that an ONO gate dielectric carefully formed on 4H-SiC has extremely high reliability even under a negative electric field at least up to a junction temperature of 300°C, making it promising for power MOS and CMOS applications. Medium charge to failure of –30 C/cm2 was achieved for fully processed polycrystalline Si gate MONOS capacitors with an equivalent SiO2 thickness of teq = 44 nm and a 200-μm diameter. The medium time to failure of these capacitors projected for –3 MV/cm exceeds 86 and 6.3 thousand years at room temperature and 300°C, respectively. A parasitic memory action did not appear even when Eox of -6.6 MV/cm was applied for 5000 seconds.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

795-798

DOI:

10.4028/www.scientific.net/MSF.600-603.795

Citation:

S. Tanimoto et al., "Negative Field Reliability of ONO Gate Dielectric on 4H-SiC", Materials Science Forum, Vols. 600-603, pp. 795-798, 2009

Online since:

September 2008

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$35.00

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