Negative Field Reliability of ONO Gate Dielectric on 4H-SiC

Satoshi Tanimoto; Tatsuhiro Suzuki; Shigeharu Yamagami; Hideaki Tanaka; Tetsuya Hayashi; Yukie  Hirose; Masakatsu Hoshi

doi:10.4028/www.scientific.net/MSF.600-603.795

Paper Titles

Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration
p.779

Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC
p.783

Gate-Area Dependence of SiC Thermal Oxides Reliability
p.787

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)
p.791

Negative Field Reliability of ONO Gate Dielectric on 4H-SiC
p.795

TDDB Measurement of Gate SiO₂ on 4H-SiC Formed by Chemical Vapor Deposition
p.799

Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides
p.803

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability
p.807

Characteristics of Sol-Gel Derived SiO₂Thick Film on 4H-SiC
p.811

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Negative Field Reliability of ONO Gate Dielectric on 4H-SiC

Abstract:

It was experimentally shown that an ONO gate dielectric carefully formed on 4H-SiC has extremely high reliability even under a negative electric field at least up to a junction temperature of 300°C, making it promising for power MOS and CMOS applications. Medium charge to failure of –30 C/cm2 was achieved for fully processed polycrystalline Si gate MONOS capacitors with an equivalent SiO2 thickness of teq = 44 nm and a 200-μm diameter. The medium time to failure of these capacitors projected for –3 MV/cm exceeds 86 and 6.3 thousand years at room temperature and 300°C, respectively. A parasitic memory action did not appear even when Eox of -6.6 MV/cm was applied for 5000 seconds.