Improvements in Electrical Properties of SiC Surface Using Mechano-Chemical Polishing

Kazutoshi Hotta; Kenji Hirose; Yayoi Tanaka; Kenji Kawata; Osamu Eryu

doi:10.4028/www.scientific.net/MSF.600-603.823

Paper Titles

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability
p.807

Characteristics of Sol-Gel Derived SiO₂Thick Film on 4H-SiC
p.811

New Chemical Planarization of SiC and GaN Using an Fe Plate in H₂O₂ Solution
p.815

Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
p.819

Improvements in Electrical Properties of SiC Surface Using Mechano-Chemical Polishing
p.823

The Impact of Chemical-Mechanical Polishing on Defective 4H-SiC Schottky Barrier Diodes
p.827

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)
p.831

Damage-Free Planarization of 2-Inch 4H-SiC Wafer Using Pt Catalyst Plate and HF Solution
p.835

The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries
p.839

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Improvements in Electrical Properties of SiC...

Improvements in Electrical Properties of SiC Surface Using Mechano-Chemical Polishing

Abstract:

To use SiC substrate as a semiconductor device and epitaxial growth, the surface of SiC substrate should be made smooth at an atomic level in the state of monocrystalline. But, the past slurry caused defects such as the pit and the scratch on the surface. This tendency was very strong in (000-1) C-face. We achieved ideal surface for SiC devices using newly developed slurry. In this surface, the roughness (Ra) of (0001) Si face and (000-1) C face evaluated by the AFM were 0.1nm or less, and confirmed that the surface were monocrystalline by CAICISS measurement. From these results, it is thought that the crystal face obtained by the slurry newly developed. In addition, the Schottky barrier diode was formed directly on the polished surface, that was obtained the breakdown voltage of 1.2kV or more. We thought that this results is possible to make the Schottky barrier diode without epitaxial growth.