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Improvements in Electrical Properties of SiC Surface Using Mechano-Chemical Polishing
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Temperature Dependence of Plasma Chemical Vaporization Machining of Silicon and Silicon Carbide
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The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries

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Abstract:

The influence of the chemical mechanical planarization process on the 4o off-axis 4HN SiC removal rate for silicon carbide slurry produced by Cabot Microelectronics Corporation (CMC) has been studied. A detailed kinetic analysis was applied and the linearity of an Arrhenius-like activation energy plot suggests that the primary removal occurs from particles adhered to the pad surface.

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Silicon Carbide and Related Materials 2007 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Pages:

839-842

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.839

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Online since:

September 2008

Authors:

Michael L. White, Stan Reggie, Nevin Naguib, Kenneth Nicholson, Jeffrey Gilliland, Alicia Walters

Keywords:

Activation Energy, Arrhenius, Chemical-Mechanical Planarization (CMP), CMP, Polishing, Process, Silicon Carbide (SiC)

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© 2009 Trans Tech Publications Ltd. All Rights Reserved

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References

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