The Impact of Chemical-Mechanical Polishing on Defective 4H-SiC Schottky Barrier Diodes

Abstract:

Article Preview

In this article, the correlation of surface morphological defects and barrier-height inhomogeneities with the electrical characteristics of defective 4H-SiC Schottky barrier diodes (SBDs) before and after chemical-mechanical polishing (CMP) is investigated. The forward characteristics, an ideality factor and a single barrier height of a SBD, remain the same after CMP, so that CMP does not affect SBD characteristics. Most barrier-height inhomogeneities are eliminated or improved after CMP. Therefore, leakage current induced by barrier-height inhomogeneities are improved by CMP as well. In addition, about 40% of SBDs with carrots inside the active areas exhibits double barriers before CMP. This excludes that carrots are a cause of barrier-height inhomogeneities. In reverse-bias mode, CMP reduces reverse leakage current at low bias and increases breakdown voltage due to the reduction of thermionic field emission and elimination of local enhanced electric fields.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

827-830

DOI:

10.4028/www.scientific.net/MSF.600-603.827

Citation:

K. Y. Lee et al., "The Impact of Chemical-Mechanical Polishing on Defective 4H-SiC Schottky Barrier Diodes", Materials Science Forum, Vols. 600-603, pp. 827-830, 2009

Online since:

September 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.