Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs

Corey J. Cochrane; Patrick M. Lenahan; Aivars J. Lelis

doi:10.4028/www.scientific.net/MSF.600-603.719

Paper Titles

Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays
p.703

Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays
p.707

4H-SiC p-Channel MOSFETs with Epi-Channel Structure
p.711

Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs
p.715

Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs
p.719

The Inefficiency of H₂-Passivation as a Criterion for the Origin of SiC/SiO₂ Deep Interface States - a Theoretical Study
p.723

Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy
p.727

Effect of Post-Oxidation Annealing on High-Temperature Grown SiO₂/4H-SiC Interface
p.731

Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor
p.735

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Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs

Abstract:

We apply electrically detected magnetic resonance (EDMR) to variously processed 4H SiC MOSFETs from two vendors. Although, the EDMR line shapes observed are nearly the same for vendor 1 devices subjected to a nitric oxide (NO) anneal and devices without it, the relationship between EDMR and gate voltage differs greatly between these samples. Furthermore, the EDMR response versus gate bias varies dramatically. EDMR results from a third device produced by a second vendor are very different from those provided by the first vendor. This result implies that significantly different defect populations are present in devices fabricated by different vendors.