Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays

Shigeomi Hishiki; Naoya Iwamoto; Takeshi Ohshima; Hisayoshi Itoh; Kazu Kojima; K. Kawano

doi:10.4028/www.scientific.net/MSF.600-603.707

Paper Titles

High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing
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High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface
p.695

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation
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Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays
p.703

Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays
p.707

4H-SiC p-Channel MOSFETs with Epi-Channel Structure
p.711

Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs
p.715

Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs
p.719

The Inefficiency of H₂-Passivation as a Criterion for the Origin of SiC/SiO₂ Deep Interface States - a Theoretical Study
p.723

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Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays

Abstract:

The effect of the fabrication process of n-channel 6H-SiC MOSFETs on their radiation resistance is investigated. MOSFETs that post implantation annealing for source and drain was carried out with carbon coating on the sample surface are compared to MOSFETs that post implantation annealing was carried out without carbon coating. The radiation resistance (gamma-rays) of the carbon-coated MOSFETs is higher than that of non-coated ones. The channel mobility for MOSFETs whose gate oxide was formed using pyrogenic or dry oxidation process dose not change by gamma-ray irradiation below 1x105 Gy. The value of channel mobility slightly increases with increasing dose above 1x105 Gy. No significant increase in irradiation induced interface traps is observed.