High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface

Takeyoshi Masuda; Shin Harada; Takashi Tsuno; Yasuo Namikawa; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.600-603.695

Paper Titles

Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO₂ Stack Gate Structures
p.679

Anomalously High Channel Mobility in SiC-MOSFETs with Al₂O₃/SiO_x/SiC Gate Structure
p.683

Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique
p.687

High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing
p.691

High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface
p.695

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation
p.699

Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays
p.703

Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays
p.707

4H-SiC p-Channel MOSFETs with Epi-Channel Structure
p.711

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603High Channel Mobility of 4H-SiC MOSFET Fabricated...

High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface

Abstract:

Improvement of the channel mobility is needed in 4H-SiC MOSFETs for the maximum utilization of the material potential for novel power devices. We have attempted to obtain smoother MOS interfaces as one of the ways to reduce the interface states which lead to decrease of the channel mobility. We formed a terrace on the macro-stepped surface by annealing in Si melt and found that it was atomically flat. We fabricated a lateral MOSFET on the macro-stepped surface and obtained a high MOS channel mobility of 102 cm2/Vs.