TEM Observation of SiO2/4H-SiC Hetero Interface
The SiO2/4H-SiC hetero-interface was observed using TEM in plan-view geometry. Local roughening of the SiO2/4H-SiC hetero-interface accompanied with local generation of basal-plane dislocations in SiC was observed. In some places, local variations in film thickness of SiO2 as well as the presence of extra carbon and particle-like contrast asociated with the generation of basal-plane dislocations in SiC was observed. The influence of these defect regions on MOSFET properties is discussed.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
H. Matsuhata et al., "TEM Observation of SiO2/4H-SiC Hetero Interface ", Materials Science Forum, Vols. 600-603, pp. 671-674, 2009