TEM Observation of SiO2/4H-SiC Hetero Interface

Hirofumi  Matsuhata; Junji Senzaki; Ichiro  Nagai; Hirotaka Yamaguchi

doi:10.4028/www.scientific.net/MSF.600-603.671

Paper Titles

4H Silicon Carbide Etching Using Chlorine Trifluoride Gas
p.655

Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen
p.659

Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime
p.663

Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry
p.667

TEM Observation of SiO₂/4H-SiC Hetero Interface
p.671

Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face
p.675

Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO₂ Stack Gate Structures
p.679

Anomalously High Channel Mobility in SiC-MOSFETs with Al₂O₃/SiO_x/SiC Gate Structure
p.683

Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique
p.687

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603TEM Observation of SiO2/4H-SiC Hetero Interface

TEM Observation of SiO₂/4H-SiC Hetero Interface

Abstract:

The SiO2/4H-SiC hetero-interface was observed using TEM in plan-view geometry. Local roughening of the SiO2/4H-SiC hetero-interface accompanied with local generation of basal-plane dislocations in SiC was observed. In some places, local variations in film thickness of SiO2 as well as the presence of extra carbon and particle-like contrast asociated with the generation of basal-plane dislocations in SiC was observed. The influence of these defect regions on MOSFET properties is discussed.