TEM Observation of SiO2/4H-SiC Hetero Interface

Abstract:

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The SiO2/4H-SiC hetero-interface was observed using TEM in plan-view geometry. Local roughening of the SiO2/4H-SiC hetero-interface accompanied with local generation of basal-plane dislocations in SiC was observed. In some places, local variations in film thickness of SiO2 as well as the presence of extra carbon and particle-like contrast asociated with the generation of basal-plane dislocations in SiC was observed. The influence of these defect regions on MOSFET properties is discussed.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

671-674

DOI:

10.4028/www.scientific.net/MSF.600-603.671

Citation:

H. Matsuhata et al., "TEM Observation of SiO2/4H-SiC Hetero Interface ", Materials Science Forum, Vols. 600-603, pp. 671-674, 2009

Online since:

September 2008

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Price:

$35.00

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