Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen

Abstract:

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Anisotropic thermal etching of 4H-SiC {0001} and {11-20} substrates was studied in the mixed gas of chlorine (Cl2) and oxygen (O2) over 900oC. Etch pits appeared only on the (0001) Si face. Etching rates depended on the temperature, O2/Cl2 ratio, and an etching direction on the substrate surfaces. When the mesa structure was formed by the selective etching method, sloped sidewalls were observed around the periphery of the mesa. The angle of sidewalls depended on the orientation of substrates.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

659-662

DOI:

10.4028/www.scientific.net/MSF.600-603.659

Citation:

T. Hatayama et al., "Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen ", Materials Science Forum, Vols. 600-603, pp. 659-662, 2009

Online since:

September 2008

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Price:

$35.00

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