Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen

Tomoaki Hatayama; T. Shimizu; Hiroshi Yano; Yukiharu Uraoka; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.600-603.659

Paper Titles

Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode
p.643

Investigation of Subcontact Layers in SiC after Diffusion Welding
p.647

Isotropic Etching of SiC
p.651

4H Silicon Carbide Etching Using Chlorine Trifluoride Gas
p.655

Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen
p.659

Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime
p.663

Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry
p.667

TEM Observation of SiO₂/4H-SiC Hetero Interface
p.671

Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face
p.675

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Anisotropic Etching of SiC in the Mixed Gas of...

Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen

Abstract:

Anisotropic thermal etching of 4H-SiC {0001} and {11-20} substrates was studied in the mixed gas of chlorine (Cl2) and oxygen (O2) over 900oC. Etch pits appeared only on the (0001) Si face. Etching rates depended on the temperature, O2/Cl2 ratio, and an etching direction on the substrate surfaces. When the mesa structure was formed by the selective etching method, sloped sidewalls were observed around the periphery of the mesa. The angle of sidewalls depended on the orientation of substrates.