Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime

Yasuto Hijikata; Takeshi Yamamoto; Hiroyuki Yaguchi; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.600-603.663

Paper Titles

Investigation of Subcontact Layers in SiC after Diffusion Welding
p.647

Isotropic Etching of SiC
p.651

4H Silicon Carbide Etching Using Chlorine Trifluoride Gas
p.655

Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen
p.659

Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime
p.663

Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry
p.667

TEM Observation of SiO₂/4H-SiC Hetero Interface
p.671

Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face
p.675

Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO₂ Stack Gate Structures
p.679

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Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime

Abstract:

To explain the growth rate enhancement of SiC oxidation in the thin oxide regime, which was recently found from the real time monitoring experiments of the initial oxidation stage of SiC (000–1) C-face using an in-situ spectroscopic ellipsometer, we tried to apply the interfacial Si emission model, which has been originally proposed for Si oxidation, and found that the Si emission model successfully reproduced the SiC oxidation rates at the whole range of oxide thickness and at oxidation temperatures measured. By comparing with the simulations for Si oxidation, we have discussed the oxidation mechanism of SiC.