Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime

Abstract:

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To explain the growth rate enhancement of SiC oxidation in the thin oxide regime, which was recently found from the real time monitoring experiments of the initial oxidation stage of SiC (000–1) C-face using an in-situ spectroscopic ellipsometer, we tried to apply the interfacial Si emission model, which has been originally proposed for Si oxidation, and found that the Si emission model successfully reproduced the SiC oxidation rates at the whole range of oxide thickness and at oxidation temperatures measured. By comparing with the simulations for Si oxidation, we have discussed the oxidation mechanism of SiC.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

663-666

DOI:

10.4028/www.scientific.net/MSF.600-603.663

Citation:

Y. Hijikata et al., "Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime", Materials Science Forum, Vols. 600-603, pp. 663-666, 2009

Online since:

September 2008

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Price:

$35.00

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