Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide

Reza Ghandi; Hyung Seok Lee; Martin Domeij; Carl Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.600-603.635

Paper Titles

Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC
p.619

Structure and Lattice Location of Ge Implanted 4H-SiC
p.623

Laser Doping of Chromium and Selenium in p-Type 4H-SiC
p.627

Phase Formation and Growth Kinetics of an Interface Layer in Ni/SiC
p.631

Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide
p.635

Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC
p.639

Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode
p.643

Investigation of Subcontact Layers in SiC after Diffusion Welding
p.647

Isotropic Etching of SiC
p.651

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Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide

Abstract:

This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer backside are important especially for vertical power devices. Ni contacts were deposited using E-beam evaporation and annealed at different temperatures (700-1050 °C) in RTP to obtain optimum conditions for forming low resistive ohmic contacts. Our results indicate that 1 min annealing at temperatures between 950 and 1000 °C provides high quality ohmic contacts with a contact resistivity of 2.3x10-5 Ωcm2. Also our XRD results show that different Ni silicide phases appear in this annealing temperature range.