Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy

Takeshi  Mitani; Ryo Hattori; Masanobu Yoshikawa

doi:10.4028/www.scientific.net/MSF.600-603.615

Paper Titles

Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face
p.597

Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC
p.603

Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices
p.607

Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC
p.611

Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy
p.615

Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC
p.619

Structure and Lattice Location of Ge Implanted 4H-SiC
p.623

Laser Doping of Chromium and Selenium in p-Type 4H-SiC
p.627

Phase Formation and Growth Kinetics of an Interface Layer in Ni/SiC
p.631

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Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy

Abstract:

Cross-sectional CL measurements have been performed on the cleaved surface of the Al-ion implanted 4H-SiC. The strong L1 luminescence that originates from the DI defect has been observed even in the deep region (~10 μm) where implanted ions do not penetrate. In the implanted layer, CL results show that high-density non-radiative defects remain even after activation annealing. Generation of the DI defect in the deep region is presumably attributed to the diffusion of point defects from the implanted layer.