Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy

Abstract:

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Cross-sectional CL measurements have been performed on the cleaved surface of the Al-ion implanted 4H-SiC. The strong L1 luminescence that originates from the DI defect has been observed even in the deep region (~10 μm) where implanted ions do not penetrate. In the implanted layer, CL results show that high-density non-radiative defects remain even after activation annealing. Generation of the DI defect in the deep region is presumably attributed to the diffusion of point defects from the implanted layer.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

615-618

DOI:

10.4028/www.scientific.net/MSF.600-603.615

Citation:

T. Mitani et al., "Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy ", Materials Science Forum, Vols. 600-603, pp. 615-618, 2009

Online since:

September 2008

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$35.00

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