Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC
Defect formation during the ion-implantation/annealing process in 4H-SiC epilayers is investigated by X-ray topography, KOH etching analysis and transmission electron microscopy. Nitrogen and phosphorus ions are implanted in the 4H-SiC epilayers and then activation annealing is performed at 1670 °C. Linearly arrayed or clustered extended defects are found to be formed during the implantation/annealing process by comparing X-ray topography images taken before and after the process. It is confirmed that the defect arrays are formed underneath a shallow groove on the surface and consist of a high density of basal-plane Shockley-type stacking faults.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
M. Nagano et al., "Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC", Materials Science Forum, Vols. 600-603, pp. 611-614, 2009