Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

Masahiro Nagano; Hidekazu Tsuchida; Takuma Suzuki; Tetsuo Hatakeyama; Junji Senzaki; Kenji Fukuda

doi:10.4028/www.scientific.net/MSF.600-603.611

Paper Titles

Dynamical Simulation of SiO₂/4H-SiC Interface on C-Face Oxidation Process: From First Principles
p.591

Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face
p.597

Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC
p.603

Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices
p.607

Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC
p.611

Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy
p.615

Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC
p.619

Structure and Lattice Location of Ge Implanted 4H-SiC
p.623

Laser Doping of Chromium and Selenium in p-Type 4H-SiC
p.627

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Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

Abstract:

Defect formation during the ion-implantation/annealing process in 4H-SiC epilayers is investigated by X-ray topography, KOH etching analysis and transmission electron microscopy. Nitrogen and phosphorus ions are implanted in the 4H-SiC epilayers and then activation annealing is performed at 1670 °C. Linearly arrayed or clustered extended defects are found to be formed during the implantation/annealing process by comparing X-ray topography images taken before and after the process. It is confirmed that the defect arrays are formed underneath a shallow groove on the surface and consist of a high density of basal-plane Shockley-type stacking faults.