Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

Abstract:

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Defect formation during the ion-implantation/annealing process in 4H-SiC epilayers is investigated by X-ray topography, KOH etching analysis and transmission electron microscopy. Nitrogen and phosphorus ions are implanted in the 4H-SiC epilayers and then activation annealing is performed at 1670 °C. Linearly arrayed or clustered extended defects are found to be formed during the implantation/annealing process by comparing X-ray topography images taken before and after the process. It is confirmed that the defect arrays are formed underneath a shallow groove on the surface and consist of a high density of basal-plane Shockley-type stacking faults.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

611-614

DOI:

10.4028/www.scientific.net/MSF.600-603.611

Citation:

M. Nagano et al., "Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC", Materials Science Forum, Vols. 600-603, pp. 611-614, 2009

Online since:

September 2008

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$35.00

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