Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime

Konstantinos Rogdakis; Marc Bescond; Edwige Bano; Konstantinos Zekentes

doi:10.4028/www.scientific.net/MSF.600-603.579

Paper Titles

Evolution and Structure of Graphene Layers on SiC(0001)
p.563

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy
p.567

Dots Formation by CVD in the SiC-Si Hetero-System
p.571

Electronic Band Structure of Cubic Silicon Carbide Nanowires
p.575

Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime
p.579

Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC
p.585

Dynamical Simulation of SiO₂/4H-SiC Interface on C-Face Oxidation Process: From First Principles
p.591

Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face
p.597

Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC
p.603

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Theoretical Comparison of 3C-SiC and Si Nanowire...

Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime

Abstract:

3C-SiC is a promising material for high power and high-speed electronic devices as well as in sensors operating at high temperatures or hostile environments. For these reasons, we solved self-consistently the Poisson equation within the quantum Non Equilibrium Green Function Formalism (NEGF) in order to model and compare 3C-SiC and Si nanowire (NW) Field Effect Transistors (FETs) operating in ballistic regime (at room temperature 300 K). As a general conclusion of our calculations, Si and SiC NW FETs have almost the same electrical behavior: they depict the same subthreshold slope and have similar on currents [ION/IOFF (SiC)~81 % ION/IOFF (Si) in case of 4 nm NW cross section side].