Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime

Abstract:

Article Preview

3C-SiC is a promising material for high power and high-speed electronic devices as well as in sensors operating at high temperatures or hostile environments. For these reasons, we solved self-consistently the Poisson equation within the quantum Non Equilibrium Green Function Formalism (NEGF) in order to model and compare 3C-SiC and Si nanowire (NW) Field Effect Transistors (FETs) operating in ballistic regime (at room temperature 300 K). As a general conclusion of our calculations, Si and SiC NW FETs have almost the same electrical behavior: they depict the same subthreshold slope and have similar on currents [ION/IOFF (SiC)~81 % ION/IOFF (Si) in case of 4 nm NW cross section side].

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

579-582

DOI:

10.4028/www.scientific.net/MSF.600-603.579

Citation:

K. Rogdakis et al., "Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime", Materials Science Forum, Vols. 600-603, pp. 579-582, 2009

Online since:

September 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.