Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

Yi Chen; R. Balaji; Michael Dudley; Madhu Murthy; Serguei I. Maximenko; Jaime A. Freitas

doi:10.4028/www.scientific.net/MSF.600-603.549

Paper Titles

SiC Polytype Stability Influenced by Ge Impurities
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Space Charge Waves in 6H-SiC and 4H-SiC
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Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures
p.541

Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation
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Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography
p.549

Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System
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Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te
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Evolution and Structure of Graphene Layers on SiC(0001)
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Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy
p.567

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Mapping of Defects in Large-Area Silicon Carbide...

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

Abstract:

Comparative studies of defect microstructure in 4H-SiC wafers have been carried out using photoluminescence (PL) imaging and grazing-incidence Synchrotron White Beam X-ray Topography. Images of low angle grain boundaries on the PL images correlate well with SWBXT observations, and similar correlation can be established for some micropipe images although the latter is complicated by the overall level of distortion and misorientation associated with the low angle grain boundaries and the fact that many of the micropipes are located in or close to the boundaries. This validation indicates that PL imaging may provide a rapid way of imaging such defect structures in large-scale SiC wafers.