Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System

Tetsuo Hatakeyama; Kyoichi Ichinoseki; N. Higuchi; Kenji Fukuda; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.600-603.553

Paper Titles

Space Charge Waves in 6H-SiC and 4H-SiC
p.537

Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures
p.541

Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation
p.545

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography
p.549

Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System
p.553

Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te
p.557

Evolution and Structure of Graphene Layers on SiC(0001)
p.563

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy
p.567

Dots Formation by CVD in the SiC-Si Hetero-System
p.571

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Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System

Abstract:

There is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality of SiC wafers for SiC power devices. We have examined whether the laser-based optical non-destructive inspection system by KLA-Tencor meets these requirements. Using this system, incoming inspection of purchased SiC wafers has been performed. The obtained inspection data show that micropipe density is sufficiently low in a device-grade wafer, and therefore, micropipes are not the main cause of device failure. The next challenges for a device-grade SiC wafer are reduction of epitaxial defects and relatively small defects classified as “particles”.