Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System

Abstract:

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There is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality of SiC wafers for SiC power devices. We have examined whether the laser-based optical non-destructive inspection system by KLA-Tencor meets these requirements. Using this system, incoming inspection of purchased SiC wafers has been performed. The obtained inspection data show that micropipe density is sufficiently low in a device-grade wafer, and therefore, micropipes are not the main cause of device failure. The next challenges for a device-grade SiC wafer are reduction of epitaxial defects and relatively small defects classified as “particles”.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

553-556

DOI:

10.4028/www.scientific.net/MSF.600-603.553

Citation:

T. Hatakeyama et al., "Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System", Materials Science Forum, Vols. 600-603, pp. 553-556, 2009

Online since:

September 2008

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Price:

$35.00

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