Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures

Alexander A. Lebedev; Pavel L. Abramov; Nina V. Agrinskaya; Ven I. Kozub; Alexey N. Kuznetsov; Sergey P. Lebedev; Gagik A. Oganesyan; L.M. Sorokin; A.V. Chernyaev; Dmitrii Shamshur

doi:10.4028/www.scientific.net/MSF.600-603.541

Paper Titles

Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
p.525

Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS
p.529

SiC Polytype Stability Influenced by Ge Impurities
p.533

Space Charge Waves in 6H-SiC and 4H-SiC
p.537

Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures
p.541

Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation
p.545

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography
p.549

Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System
p.553

Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te
p.557

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Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures

Abstract:

3C-SiC epitaxial layers were grown by method of sublimation epitaxy in vacuum on 6HSiC substrates. It was done investigation of magneto resistance and Hall effect of 3C-SiC/6H-SiC heterostructures in temperature range 1,4 – 300 К. At helium temperatures it was founded low samples resistance and negative magneto-resistance in week magnetic field ( ~ 1 T). Analysis of obtained results shows, that low samples resistance can be connected with metal-isolation junction in 3C-SiC epitaxial films..