Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures
3C-SiC epitaxial layers were grown by method of sublimation epitaxy in vacuum on 6HSiC substrates. It was done investigation of magneto resistance and Hall effect of 3C-SiC/6H-SiC heterostructures in temperature range 1,4 – 300 К. At helium temperatures it was founded low samples resistance and negative magneto-resistance in week magnetic field ( ~ 1 T). Analysis of obtained results shows, that low samples resistance can be connected with metal-isolation junction in 3C-SiC epitaxial films..
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
A. A. Lebedev et al., "Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures", Materials Science Forum, Vols. 600-603, pp. 541-544, 2009