Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS

Nada Habka; Véronique Soulière; Jean Marie Bluet; Maher Soueidan; Gabriel Ferro; Bilal Nsouli

doi:10.4028/www.scientific.net/MSF.600-603.529

Paper Titles

The Specific Features of High-Field Transport in SiC Polytypes
p.513

Thermal Expansion Coefficients of 6H Silicon Carbide
p.517

Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method
p.521

Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
p.525

Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS
p.529

SiC Polytype Stability Influenced by Ge Impurities
p.533

Space Charge Waves in 6H-SiC and 4H-SiC
p.537

Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures
p.541

Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation
p.545

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Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS

Abstract:

We report an optical study of 3C-SiC layers grown on 6H-SiC substrates by VLS mechanism using a Si-Ge melt. The photoluminescence and μ-Raman results show a clear and significant incorporation of germanium in the layers from the melt. A photoluminescence emission attributed to Ge related transitions is observed in the infrared region. μ-Raman spectra exhibit two peaks related to the Ge-Ge and Si-Ge bonds. From the characteristics of these Raman peaks, it was found that the amount of Ge incorporated inside the 3C layers increases with increasing Ge content of the melt. This has been verified by Particle-Induced X-rays Emission (PIXE) measurements which gave a Ge concentration varying from ~ 1x1019 to ~ 1x1020 at.cm-3. All these results suggest that Ge incorporates in the VLS grown 3C layers by forming Si-Ge-(C) nanoclusters.