SiC Polytype Stability Influenced by Ge Impurities

Abstract:

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In this paper we present a methodology to affect the stability of polytypes formation during heteroepitaxial growth of SiC on Si. This methodology is based on the investigation of growth related parameters. These parameters involve substrate temperature, effect of impurities on surface diffusion, strain, and super-saturation conditions as solved by using SSMBE growth (Solid Source molecular beam epitaxy).

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

533-536

DOI:

10.4028/www.scientific.net/MSF.600-603.533

Citation:

R. Nader et al., "SiC Polytype Stability Influenced by Ge Impurities", Materials Science Forum, Vols. 600-603, pp. 533-536, 2009

Online since:

September 2008

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Price:

$35.00

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