SiC Polytype Stability Influenced by Ge Impurities

Richard Nader; Michel Kazan; E. Moussaed; Charbel Zgheib; Bilal Nsouli; Joerg Pezoldt; Pierre M. Masri

doi:10.4028/www.scientific.net/MSF.600-603.533

Paper Titles

Thermal Expansion Coefficients of 6H Silicon Carbide
p.517

Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method
p.521

Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
p.525

Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS
p.529

SiC Polytype Stability Influenced by Ge Impurities
p.533

Space Charge Waves in 6H-SiC and 4H-SiC
p.537

Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures
p.541

Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation
p.545

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography
p.549

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603SiC Polytype Stability Influenced by Ge Impurities

SiC Polytype Stability Influenced by Ge Impurities

Abstract:

In this paper we present a methodology to affect the stability of polytypes formation during heteroepitaxial growth of SiC on Si. This methodology is based on the investigation of growth related parameters. These parameters involve substrate temperature, effect of impurities on surface diffusion, strain, and super-saturation conditions as solved by using SSMBE growth (Solid Source molecular beam epitaxy).