Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites

Abstract:

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Metal impurities are known to degrade dramatically the performances of silicon-based devices, even at concentrations as low as 1012 cm-3. A specific process, named proximity gettering, has been optimised by some authors in order to reduce the influence of these impurities [1]. This process consists in the building of a favourable impurity trapping zone in a non-active area of the device, by introducing implantation defects. This paper reports on the application of introducing such gettering sites as an approach to control phonon properties in 4H-SiC epilayer, and increase the thermal conductivity.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

525-528

DOI:

10.4028/www.scientific.net/MSF.600-603.525

Citation:

L. Ottaviani et al., "Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites", Materials Science Forum, Vols. 600-603, pp. 525-528, 2009

Online since:

September 2008

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$35.00

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