Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites

Laurent Ottaviani; Michel Kazan; Pierre M. Masri; Thierry Sauvage

doi:10.4028/www.scientific.net/MSF.600-603.525

Paper Titles

Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means
p.509

The Specific Features of High-Field Transport in SiC Polytypes
p.513

Thermal Expansion Coefficients of 6H Silicon Carbide
p.517

Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method
p.521

Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
p.525

Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS
p.529

SiC Polytype Stability Influenced by Ge Impurities
p.533

Space Charge Waves in 6H-SiC and 4H-SiC
p.537

Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures
p.541

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Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites

Abstract:

Metal impurities are known to degrade dramatically the performances of silicon-based devices, even at concentrations as low as 1012 cm-3. A specific process, named proximity gettering, has been optimised by some authors in order to reduce the influence of these impurities [1]. This process consists in the building of a favourable impurity trapping zone in a non-active area of the device, by introducing implantation defects. This paper reports on the application of introducing such gettering sites as an approach to control phonon properties in 4H-SiC epilayer, and increase the thermal conductivity.