Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
Metal impurities are known to degrade dramatically the performances of silicon-based devices, even at concentrations as low as 1012 cm-3. A specific process, named proximity gettering, has been optimised by some authors in order to reduce the influence of these impurities . This process consists in the building of a favourable impurity trapping zone in a non-active area of the device, by introducing implantation defects. This paper reports on the application of introducing such gettering sites as an approach to control phonon properties in 4H-SiC epilayer, and increase the thermal conductivity.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
L. Ottaviani et al., "Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites", Materials Science Forum, Vols. 600-603, pp. 525-528, 2009