The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC

Andreas Gällström; Björn Magnusson; Aurelie Thuaire; Plamen PASKOV; Anne Henry; Erik Janzén

doi:10.4028/www.scientific.net/MSF.600-603.397

Paper Titles

Intrinsic Defects in HPSI 6H-SiC: an EPR Study
p.381

Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC
p.385

Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates
p.389

Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.393

The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC
p.397

Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
p.401

Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
p.405

Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC
p.409

New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC
p.413

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The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC

Abstract:

The photoluminescence (PL) of the UD-4 defect is observed in semi-insulating bulk 4H, 6H and 15R SiC. In 4H and 6H SiC the UD-4 defect consists of two families of no-phonon (NP) lines, Ua and Ub, and in 15R SiC it consists of three families, Ua, Ub and U15R. The Ua family in 4H, 6H and 15R all show similar temperature behavior with higher energy NP lines becomming observable at higher temperatures. In the case of the Ub and U15R families, a luminescence line with lower energy than the prominent luminescence line appears at higher temperatures. The polarization and Zeeman measurements suggest that the defect has C3v symmetry.