Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates

N.Y. Garces; E.R. Glaser; W.E. Carlos; Mark A. Fanton

doi:10.4028/www.scientific.net/MSF.600-603.389

Paper Titles

Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition
p.373

Investigation of Pits Formed at Oxidation on 4H-SiC
p.377

Intrinsic Defects in HPSI 6H-SiC: an EPR Study
p.381

Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC
p.385

Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates
p.389

Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.393

The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC
p.397

Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
p.401

Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
p.405

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Behavior of Native Defects in Semi-Insulating...

Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates

Abstract:

We have recently explored the nature and stability of native defects in high-purity semi-insulating 4H-SiC bulk substrates grown by PVT and HTCVD methods after post-growth anneal treatments up to 2400oC using electron paramagnetic resonance (EPR) and low-temperature photoluminescence (PL) experiments. In the present study we have extended these investigations to SI 4H-SiC subjected to the same post-growth high-temperature anneal treatments, where significantly enhanced carrier lifetimes have been reported for such conditions, but cooled at different rates ranging from ~2-25oC/min. Previously, the intensities of the native defects decreased monotonically with anneals from 1200–1800oC; however, it was recently observed that several of these defects reappear after annealing at 2100oC and above. Our results illustrate the effects of the post-growth anneal treatments and cool-down rates on the concentrations of native defects.