Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure

Ryuichi Sugie; Masanobu Yoshikawa; Shin Harada; Yasuo Namikawa

doi:10.4028/www.scientific.net/MSF.600-603.353

Paper Titles

Raman Scattering Study of Stress Distribution around Dislocation in SiC
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Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
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Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
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Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping
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Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure
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Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers
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X-Ray Rocking Curve Characterization of SiC Substrates
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TEM Observation of the Polytype Transformation of Bulk SiC Ingot
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Structural Analysis of Off-Axis SiC Planes for the Growth of SiC and AlGaN Films
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HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Expansion of Stacking Faults by Electron-Beam...

Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure

Abstract:

The influence of electron-beam irradiation on defects in 4H-SiC diode structures was investigated by cathodoluminescence (CL) microscopy and spectroscopy. In addition to threading edge and screw dislocations, two types of stacking faults (SFs) were characterized by their emission energy, geometric shape, and the sensitivity of electron-beam irradiation. The SFs at λ = 425 nm (2.92 eV) expand from the surface of basal plane dislocation with line direction [11-20] and change their geometric shape by electron-beam irradiation. The SFs at λ = 471 nm (2.63 eV) are only slightly influenced by electron-beam irradiation. The former corresponds to the Shockley-type SFs previously observed in the degraded p-i-n diodes, and the latter to in-grown SFs with 8H structure. The panchromatic CL images constructed by the sum of monochromatic CL images suggest that there are nonradiative recombination centers in the vicinity of Shockley-type SFs. The nucleation sites and the driving force for SF expansion are discussed.

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Materials Science Forum (Volumes 600-603)

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353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.353

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Online since:

September 2008

Authors:

Ryuichi Sugie, Masanobu Yoshikawa, Shin Harada, Yasuo Namikawa

Keywords:

4H-SiC, Cathodoluminescence, Diode, Recombination-Enhanced Dislocation Motion, Stacking Fault

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