Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon

Abstract:

3C-SiC epitaxial layers were grown on on-axis Si (001) substrates by low-pressure hot-wall chemical vapour deposition. Depending on the growth parameters, the residual strain in the 3C-SiC layer was seen to be tensile or compressive. In this work, the influence of parameters, such as growth temperature and C/Si ratio in the vapour phase, on residual strain and macroscopic layer bow is investigated. We found that the wafer bow changes from convex, at a deposition temperature of 1270° C, to concave at 1370° C. High resolution x-ray diffraction data indicate that the crystal-line perfection of the layers is lower for decreasing deposition temperature and increasing compres-sive strain. No remarkable influence of the C/Si ratio in the gaseous atmosphere on the FWHM of the rocking curve was observed.

• Periodical: Materials Science Forum (Volumes 600-603)
• Pages: 223-226
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.600-603.223
• Online since: September 2008
• Authors: Günter Wagner, J. Schwarzkopf, M. Schmidbauer, R. Fornari
• Keywords: 3C-SiC/Si, Heteroepitaxy, Hot-Wall CVD, Strain, Wafer Bow

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