Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon

Abstract:

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3C-SiC epitaxial layers were grown on on-axis Si (001) substrates by low-pressure hot-wall chemical vapour deposition. Depending on the growth parameters, the residual strain in the 3C-SiC layer was seen to be tensile or compressive. In this work, the influence of parameters, such as growth temperature and C/Si ratio in the vapour phase, on residual strain and macroscopic layer bow is investigated. We found that the wafer bow changes from convex, at a deposition temperature of 1270° C, to concave at 1370° C. High resolution x-ray diffraction data indicate that the crystal-line perfection of the layers is lower for decreasing deposition temperature and increasing compres-sive strain. No remarkable influence of the C/Si ratio in the gaseous atmosphere on the FWHM of the rocking curve was observed.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

223-226

DOI:

10.4028/www.scientific.net/MSF.600-603.223

Citation:

G. Wagner et al., "Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon", Materials Science Forum, Vols. 600-603, pp. 223-226, 2009

Online since:

September 2008

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$35.00

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